PART |
Description |
Maker |
EPC3409G-LF-15 |
PoE Synchronous Flyback Transformer
|
PCA ELECTRONICS INC.
|
EPC3410G-LF |
PoE Synchronous Flyback Transformer
|
PCA ELECTRONICS INC.
|
NCP4302 NCP4302ADR2G NCP4302BDR2G |
Secondary Side Synchronous Flyback Controller
|
ON Semiconductor
|
LTC4268CDKD-1PBF LTC4268IDKD-1PBF LTC4268IDKD-1TR |
High Power PD with Synchronous NoOpto Flyback Controller
|
Linear Technology
|
LTC4269IDKD-1-PBF LTC4269IDKD-1-TRPBF LTC4269CDKD- |
IEEE 802.3at PD with Synchronous No-Opto Flyback Controller
|
Linear Technology
|
LT3837NBSP LT3837 |
Isolated No-Opto Synchronous Flyback Controller From old datasheet system
|
Linear Technology Corporation
|
FAN6240 |
Secondary-Side Synchronous Rectifier Controller Flyback Converters
|
ON Semiconductor
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
IRF240SMD |
N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))
|
SemeLAB SEME-LAB[Seme LAB] Air Cost Control
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|
AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|